收藏本站
MCH6602
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
30
1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS=10V, ID=100 μ A
VDS=10V, ID=80mA
ID=80mA, VGS=4V
0.4
0.15
0.22
2.9
1.3
3.7
V
S
Ω
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
See speci ? ed Test Circuit.
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0V
3.7
6.4
7.0
5.9
2.3
19
65
155
120
1.58
0.26
0.31
0.87
5.2
12.8
1.2
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
4V
0V
VIN
VDD=15V
ID=80mA
RL=187.5 Ω
PW=10 μ s
VIN
D
VOUT
D.C. ≤ 1%
G
P.G
50 Ω
S
MCH6602
Ordering Information
Device
MCH6602-TL-E
Package
MCPH6
Shipping
3,000pcs./reel
memo
Pb-Free
No.6445-2/6
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MCH6604-TL-E MOSFET N-CH DUAL 50V 250MA MCPH6
MCH6613-TL-E MOSFET N/P-CH 30V 350MA MCPH6
MCH6660-TL-H MOSFET N/P-CH 10V 2/1.5A MCPH6
MCH6662-TL-H MOSFET N-CH 20V 2A DUAL MCPH6
MCH6663-TL-H MOSFET N/P-CH 30V 1.8/1.5A MCPH6
MCP2030A-I/P IC KEYLESS ENTRY AFE 3CH 14PDIP
MCP2030DM-TPR BOARD DEMO PICTAIL MCP2030
MCP9502PT-095E/OT IC TEMP SWITCH PROGR P-P SOT23-5
相关代理商/技术参数
MCH6603 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications
MCH6603_06 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6603_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6603-TL-H 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MCH6604 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications
MCH6604_06 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6604-TL-E 功能描述:MOSFET NCH+NCH 2.5V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MCH6605 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications